Diodes creates dual-device SO8 package
Diodes Incorporated
Dual-device SO8 package
Diodes Incorporated has put a complementary pair of 100V enhancement mode Mosfets into an SO8 package, achieving the same performance as much larger individually packaged parts.
The ZXMC10A816 is aimed at H-bridge circuits in DC fan and inverter circuits, Class D amplifier output stages and an array of other 48V applications.
Enabling designers to replace equivalent devices in SOT223 and DPak (TO252) packages, the N- and P-channel Mosfet combination reduces board space and component count, and simplifies gate drive circuit layouts.
As an illustration of its space saving potential, the SO8 package's footprint of just 31mm2 is 30 per cent of the area of two SOT223 Mosfets.
The N- and P-channel Mosfets used in the dual-device package exhibit low gate charge and typical RDS(ON) of 230 milliohms and 235 milliohms respectively at a VGS of 10V, ensuring switching and on-state losses are minimised.
2.4W and 2.6W are respective power dissipation figures.
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