Silicon detectors offer near-infrared sensitivity
Hamamatsu Photonics
S11518 and S11519 silicon detectors
Hamamatsu has introduced a range of silicon detectors and image sensors that offer enhanced near-infrared sensitivity for applications such as YAG laser monitors and high-speed IR measurements.
Using laser processing technology, MEMS structures can be fabricated on the silicon surface that act to reduce reflections and increase the surface area of the active element.
This process increases the sensitivity in wavelengths longer than 800nm.
The S11518 and S11519 are silicon avalanche photodiodes (APDs) utilising this new technology, offering ultra-high sensitivities at 1,000nm of between 70-75A/W at a gain of 100.
Compared with conventional APDs designed for YAG laser detection, the S11518 and S11519 offer an additional 15-20A/W photo sensitivity under the same operating conditions.
At 1.06um, the quantum efficiency of these APDs reaches 40 per cent, compared with 20 per cent for a conventional APD.
Both the S11518 and S11519 are available in 1mm-diameter and 3mm-diameter active area types, which offer bandwidths between 220 and 400MHz.
The S11519 is designed for low bias operation, with improved breakdown voltage, dark current and cut-off frequency characteristics compared with a conventional APD.
The increased sensitivity in the near-infrared region makes the S11518 and S11519 IR-Enhanced APDs suitable for a range of applications,
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