Semisouth launches silicon-carbide JFETs targeted at high-end audio applications
Semisouth
SJEP120R100A and SJEP120R063A JFETs
Semisouth Laboratories has launched a range of silicon-carbide (SiC) junction gate field-effect transistors (JFETs) targeted at high-end audio applications.
The SJEP120R100A and SJEP120R063A devices are designed to offer a good linearity and distortion.
Compatible with standard gate driver ICs, both versions feature a positive temperature coefficient to facilitate parallelling, fast switching with no tail current at a maximum operating temperature of up to 150ºC and a maximum low RDS(on) of 0.100Ω and 0.063Ω respectively.
Key specifications
- The JFETs are available in TO-247 packages
- The 100mΩ part is also available in die form for integration into modules
- In push-pull topologies, the devices are claimed to exhibit a 50–70 per cent improvement in distortion and, in single-ended circuits, the improvement has been nearly 10-fold
Request more information
More stories
Semisouth's silicon carbide JFET simplifies start-up in three-phase power supplies weblink
Semisouth has introduced the SJDT170R1400, a 1,700V/1,400m? silicon carbide JFET that has been designed to simplify start-up circuit design in three-phase auxiliary power supplies.
