Trench-based LVFRs from ON Semiconductor offer efficiency and low conduction losses
ON Semiconductor
NTST30100CTG, NTST20100CTG and NTSB20U100CTG
ON Semiconductor has introduced of a range of 100V, trench-based, low-forward-voltage Schottky rectifiers (LVFR) for applications such as switching power supplies for notebook adapters or displays, reverse battery protection circuits and high-frequency DC/DC converters.
The NTST30100CTG, NTST20100CTG and NTSB20U100CTG devices use a trench topology designed to enable exceptionally low forward-voltage drop and reduced leakage current.
ON Semiconductor claims this results in low conduction losses and a substantial improvement in circuit efficiency, helping design engineers to achieve regulatory requirements without the added complexity, such as synchronous rectification.
This LVFR range utilises a trench MOS structure that enables an enhanced conduction zone under forward bias, resulting in a significant reduction in forward voltage drop and, under reverse bias, a ‘pinch off’ effect that reduces leakage current.
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