Toshiba Electronics offers MOSFETs suitable for use in mobile devices
Toshiba Electronics
SSM3J13xTU series of MOSFETs
The SSM3J13xTU series of medium power MOSFETs from Toshiba Electronics Europe are suitable for power management applications in battery-operated devices such as mobile phones and digital cameras.
The units are based on Toshiba’s P-channel U-MOSVI semiconductor process technology and have maximum voltage ratings of 20V for drain-source voltages and ±8V for gate-source voltages.
They also have a maximum gate threshold voltage of 1.0V, which enables stable switching operations from 1.5V.
The latest SSM3J133TU, SSM3J134TU and SSM3J135TU MOSFETs have respective maximum drain current ratings of -5.5A, -3.2A and -3.0A, and have different maximum RDS(ON) and Ciss values. This gives designers a range of options to suit their chose applications.
The units are housed in UFM surface mount packaging that requires a board space of 2.0 x 2.1mm, and a body height of 0.7mm.
