Technology enables applications in smart sensors
Austriamicrosystems
H18 CMOS process technology
Austriamicrosystems has announced the release for volume production of its 0.18um High-Voltage CMOS process technology H18, which will be manufactured in IBM's Burlington wafer facility.
Jointly developed with IBM, the 0.18um High-Voltage CMOS process offers an integration density of up to 118,000 gates/mm, enabling SoC applications (System-on-Chip), as well as power-on resistance (Rdson), which directly results in a silicon area reduction.
The integration capabilities of H18 enable design houses and IDMs to create new applications in areas such as smart sensors, sensor interface devices, smart meters, industrial and building controls, and LED lighting control.
Only a few mask level adders are required on top of the fully compatible CMOS base process to implement high-voltage capabilities.
The process allows the integration of 1.8, 5, 20 and 50V devices on a single chip without any process modifications.
Process features such as Schottky barrier diode, high-resistive and precision poly, single- and dual metal-insulator-metal (MIM) capacitors, varactors and up to seven metal layers, including thick last metal, complete the High-Voltage CMOS process.
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