MOSFETs target DC-DC power supply designers
Fairchild Semiconductor
FDMS86500L N-Channel Powertrench MOSFET
Fairchild Semiconductor has developed the FDMS86500L N-Channel Powertrench MOSFET.
These are aimed at designers of DC-DC power supplies, motor-control, hot-swap and load-switch applications, as well as secondary synchronous rectification for servers.
The device is designed specifically to minimise conduction loss and switch-node ringing, and to improve the overall efficiency of DC-DC converters.
Through an advanced package and silicon combination, the FDMS86500L provides significantly lower RDS(ON), enabling lower conduction losses in an industry-standard 5 x 6mm Power 56 package.
Additionally, the FDMS86500L, using shielded-gate MOSFET technology, is said to provide very low switching losses.
When combined with the device's low conduction losses, this provides designers the improved power density they need.
The FDMS86500L offers a better figure of merit (RDS (ON) QG), delivering high efficiency and lower power dissipation in order to meet efficiency standards and regulations.
Other features of the FDMS86500L include next-generation enhanced body diode technology engineered for soft recovery, MSL1 robust package design, 100 per cent UIL testing and RoHS compliancy.
The FDMS86500L is the first Fairchild device in a portfolio of new 60V MOSFETs.
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