MOSFETS available as semiconductors for converters

The RJK0210DPA, RJK0211DPA and RJK0212DPA are used to control the voltage-conversion circuits of the CPU and the memory.

For example, they can be used as a step-down circuit for converting the 12V voltage supplied by a battery to 1.05V for use by the CPU.

Further refinements to the manufacturing process allow Renesas' MOSFETs to achieve approximately 40 per cent lower FOM compared with the company's existing products, which contribute to reduction of the power loss during voltage conversion and enable efficient DC/DC converter performance.

With a voltage tolerance (VDSS) of 25V, the products achieve maximum current (ID) of 40A for the RJK0210DPA MOSFET, 30A for the RJK0211DPA device and 25A for the RJK0212DPA device.

The products' gate-drain charge capacitance (Qgd) is 1.2, 0.9 and 0.6nC, respectively, which also is approximately 40 per cent less than Renesas' generation power MOSFETs.

When the new RJK0210DPA MOSFET is used for control and the Renesas eleventh-generation RJK0208DPA device for synchronous rectification, the maximum power conversion efficiency is 90.6 per cent at an output current level of 18A and 86.6 per cent at an output current level of 40A, when converting from 12 to 1.05 V.

These MOSFETs use Renesas' WPAK package, which measures 5.1 x 6.1mm and 0.8mm (maximum) thick.

The underside of the device has a die pad that allows heat to pass to the printed wiring board while the power MOSFET is operating and enables the power MOSFET to handle large currents.