MOSFET suits use in battery-powered devices
Toshiba Electronics
SSM3K333R
Toshiba Electronics Europe (TEE) has expanded its SSM series of small-signal MOSFETS with the SSM3K333R, whose low loss characteristics make it suitable for power management in portable applications.
Using Toshiba's latest, seventh generation n-channel process technology, the SSM3K333R MOSFET is optimised for standard voltage-switching requirements.
It exhibits maximum ON resistance (RDS[ON]) values of only 42 and 28 ohms with switching voltages of 4.5 and 10V, respectively.
As well as having low resistance values that enable the low-loss operation essential for battery-operated equipment, the SSM3K333R is specified for a maximum drain-source voltage (VDSS) of 30V.
As a result, the device is also compatible with many industrial power-management applications.
Another improvement is the new SOT-23F package, which is claimed to offer lower thermal resistance against comparable package sizes.
This improvement leads to a maximum DC current rating of 6A and a drain power dissipation capability of 1W from a package that has dimensions of only 2.9 x 2.4mm.
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