MOSFET modules suited for notebook applications.

The FDMS36xxS range incorporates a control and synchronous MOSFET, as well as a monolithic Schottky body diode in a PQFN package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

The control MOSFET (Q1) and synchronous MOSFET (SyncFET) (Q2) have been designed to provide optimal power efficiency for output currents up to 30A.

By integrating these devices into one module, the FDMS36xxS range reduces board space by replacing two or more 5 x 6mm PQFN, S08 and DPAK packages.

The FDMS36XXS range of products is designed using Fairchild’s advance charge-balanced device architecture (Shielded Gate Technology) and advanced packaging technology to achieve sub-2mOhm low-side RDS(ON) at high-performance computing rated breakdown voltages.

The product range is optimised to minimise the combination of conduction and switching losses from 300 to 600KHz, delivering reliable, highest power efficiency for point-of-load and multi-phase synchronous buck DC-DC applications.

The shield potential modulated device architecture and ultra-low source inductance packaging design used in the FDMS36xxS range delivers low noise switching, reducing susceptibility to design variation and increasing design reliability.

The low noise switching eliminates the need for design mitigation approaches that require external snubbers or gate resistors, thus reducing design BOM cost and saving additional board space.

Devices in the FDMS36xxS range currently include the FDMS3602S and FDMS3604AS Powertrench power-stage asymmetric dual N-channel MOSFETs.

Additional devices will be added based on research and customer demands.

The FDMS36xxS range is RoHS-compliant.

These dual asymmetric power-stage MOSFET modules are part of a portfolio of advanced MOSFET technology that provides power designers with a range of solutions for mission-critical high-efficiency information-processing designs.