IR launches high-voltage power MOSFET driver
International Rectifier
AUIRS2016S driver
International Rectifier (IR) has introduced a high-voltage power MOSFET high-side driver, which features an internal Vs-to-GND recharge NMOS.
The AUIRS2016S is designed for a variety of automotive gate drive applications, including common injection rails, diesel and gasoline direct injection applications and solenoid drivers.
The device's output driver features a 250mA high pulse current buffer stage.
The channel can be used to drive an N-channel power MOSFET in the high-side configuration, operating up to 150V above ground.
The AUIRS2016S also provides negative voltage spike immunity (-Vs) to protect against catastrophic events during high-current switching and short-circuit conditions.
The device is described as a highly reliable IC designed to meet the rugged performance needs of automotive under-the-hood motor control units, targeting energy-efficient applications such as diesel and gasoline direct fuel injection systems.
Qualified to AEC-Q100 standards, the AUIRS2016S also offers 5V compatible logic level inputs, one high-side output and internal low-side Vs recharge, a CMOS Schmitt trigger inverted input with a pull-up resistor and a CMOS Schmitt trigger inverted reset with a pull-down resistor.
The device utilises IR's advanced high-voltage IC process, which incorporates next-generation high-voltage level-shifting and termination technology to deliver electrical over-stress protection and higher field reliability.
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