High-performance MOSFETs have ultra-small package
Diodes Incorporated
DMN2300UFB4 n-channel MOSFET
Diodes Incorporated has unveiled a portfolio of high-performance MOSFETs packaged in the ultra-miniature DFN1006-3 package.
Occupying 0.6mm2 of PCB area, the package takes less than half the board space of equivalent SOT723 packaged parts and with a junction to ambient thermal resistance (Rthj-a) of 256 C/W, supports a power dissipation of up to 1.3W under continuous conditions, double that of comparable alternatives.
The resulting cooler running and space saving advantages of the MOSFETs coupled with an off-board height of 0.4mm makes them particularly well suited to thin-profile portable consumer electronics, including tablet PCs and smart phones.
Both n-channel and p-channel devices are initially being offered by Diodes with breakdown voltage ratings of 20, 30 and 60V for use in a variety of high-reliability load switching, signal switching and boost-conversion applications.
The 20V-rated DMN2300UFB4 n-channel MOSFET for example displays an Rdson performance of more than 50 per cent lower than competing solutions, helping to dramatically reduce conduction losses and power dissipation.
The 20V-rated DMP21D0UFB4 offers a similar performance.
Electrostatic discharge ratings of these MOSFETs is also high, at respectively 2 and 3kV.
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