Driver and MOSFET devices for graphics cards

Generation II XS DrMOS devices, available in a 6 x 6mm clip PQFN package, are claimed to feature higher system efficiency than comparable devices, with 91.5 per cent heavy-load efficiency at 12V in, 1V out and 25A, as well as 94 per cent peak efficiency.

Generation II XS DrMOS can be operated at a 2MHz switching frequency and have up to 50A of current-handling capability.

These features make it suitable for applications such as blade servers, high-performance gaming motherboards, high-performance notebooks, graphics cards and high-current DC/DC point-of-load (POL) converters.

Devices in the range offer a 5 and 3.3V Tristate level to match the Intel 4.0 DrMOS specification and are compatible with a variety of PWM controllers on the market.

The Generation II XS DrMOS range is claimed to reduce ringing due to the Powertrench MOSFET Shielded Gate technology in both the control FET and synchronous FET.

The synchronous FET also integrates a Schottky diode that eliminates external snubber circuits, thus improving overall performance and power density while reducing space and cost.

Generation II XS DrMOS devices also include a thermal warning feature, to help prevent over-temperature conditions occurring during fault situations.