NXP launches Doherty amplifiers for base stations

The BLD6G21-50 and BLD6G22-50 fully integrated amplifiers offer ease-of-design while delivering efficiency of >40 per cent at an average power of 10W.

This enables 35 per cent lower power dissipation under multi-carrier signal operation compared with class AB amplifiers.

The Doherty amplifier is plug-and-play and can be applied in the same way as a standard class AB transistor, speeding time to market.

The NXP BLD6G21-50 and BLD6G22-50 amplifiers bring savings in form factor and design effort, while eliminating the need for extra tuning during manufacturing, providing cost-efficiencies during the development process of cellular base station power amplifiers.

The BLD6G21-50 incorporates an integrated Doherty concept leveraging NXP's GEN6 LDMOS technology specifically designed for TD-SCDMA operation at frequencies from 2010MHz to 2025MHz, whereas its twin device operates at frequencies between 2110MHz to 2170MHz for W-CDMA transmission.

Both main and peak devices and delay lines, as well as the input splitter and output combiner are integrated into a standard transistor package with single input and output leads, minimising required board space.

The package has two additional pins, one of which is being used for external biasing purposes.

NXP developed the integrated Doherty technology in direct response to demand from base station providers and telecoms operators.