NEC Electronics PowerMosfets offered by Gleichmann

The devices, NP110N04PUJ and NP110N055PUJ, feature a gate charge of 150nC with a low RDS(on) of 1.8ohm and 2.4ohm respectively.

The two devices utilise NEC Electronics' SuperJunction1 technology.

By adding P-doped regions below the active P-well of the trench cells and reducing the resistance of the N-epitaxial layer through higher doping while maintaining a low on-resistance, the structure width can be enlarged and the gate charge thus reduced.

This results in a potential reduction of more than 30 per cent, compared with the UMOS-4 trench technology.

Typical fields of application for PowerMosfets, manufactured using SuperJunction1 technology, are those where it is important to switch high currents as efficiently as possible within a short time.

These include electric power steering (EPS) and industrial drives in the low-voltage field, for example, in forklift trucks or other battery-operated systems.

The devices, in a popular D2PAK package, operate with drain-source voltages of 40V and 55V.

Like all members of the NP series, the devices are qualified to AEC-Q101, support a channel temperature of up to 175C and are fully RoHS-compliant thanks to tin-plated leads.

Samples and data sheets of the low-voltage-PowerMosfets, NP110N04PUJ and NP110N055PUJ, are available now from Gleichmann Sunrise.

According to NEC Electronics, volume production is scheduled to start during the first half of 2009.