Omneo PCMs increase write speeds by 300 times

The new devices deliver higher performance, endurance and simplicity for wired and wireless communications, consumer electronics, PCs and other embedded applications.

The products blend many attributes associated with Flash memory, as well as RAM and EEPROM, while delivering new capabilities in a single device.

They provide up to 300 times faster write speeds and ten times more write endurance than current Flash memory.

Today's product introductions include support for the serial peripheral interface (Omneo P5Q PCM) as well as parallel NOR interface (Omneo P8P PCM).

Both take full advantage of the benefits of the new PCM technology while offering compatibility with these industry-standard interfaces.

Omneo P5Q PCM is a 90nm device that delivers high-speed SPI-compatibility.

The Omneo P5Q PCM combines serial NOR flash memory and EEPROM technology benefits into one by delivering byte alterability, faster programming times and greater endurance.

Byte alterability provides for easier data manipulation and software simplification by eliminating the need for erasing large blocks of data.

The over-write or 'no-erase' function enables engineers and designers to simplify software designs and accelerate system performance, improving the time it takes to program a device by up to 300 times.

The Omneo P5Q product can write up to ten times more data than Flash memory by delivering one million write cycles.

The Numonyx P8P PCM is the second release of the 90nm128Mb parallel product.

The first release was introduced in December 2008.

The first version supported 100,000 write cycles.

The new release has been improved to achieve one million write cycles.

Both products are now available in volume quantities.