Transistor suited for automotive inverter modules
International Rectifier
Insulated gate bipolar transistor
International Rectifier has introduced the AUIRG7CH80K6B-M 1,200V insulated gate bipolar transistor (IGBT) with solderable front metal (SFM).
The AUIRG7CH80K6B-M is suitable for high-current, high-voltage automotive inverter modules used in electric vehicles and hybrid electric vehicles, as well as medium-power drives.
The AUIRG7CH80K6B-M utilises International Rectifier's field stop trench technology to reduce conduction and switching losses.
In addition, the device's SFM allows dual-sided cooling to improve thermal performance and enables wire bonds to be eliminated to achieve higher reliability.
Traditionally, wire bonds are potentially a source of failure in automotive inverter modules.
The AUIRG7CH80K6B-M, with its SFM, allows the use of packaging techniques that do not feature wire bonds.
This, together with dual-sided cooling, provides improved thermal performance and higher efficiency as well as extending the reliability of inverter modules.
Other key performance benefits, according to International Rectifier, include: square reverse-bias safe operating area; up to 175C maximum operating temperature; high peak turn-off capability; positive VCE(on) temperature co-efficient; and short-circuit rating of 6us.
The AUIRG7CH80K6B-M is available in die-form only.
The device is qualified according to automotive standards and is part of International Rectifier's automotive quality initiative targeting zero defects.
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