Semikron IGBT module utilise Fuji V-IGBT chips

These modules are available with Fuji fifth-generation V-IGBT chips as am alternative to IGBT4 chips.

The low 15nH module inductance is said to offer two advantages: 50V higher DC link voltage thanks to the lower switching over-voltages; plus faster and softer IGBT switching, producing lower switching losses and boosting overall efficiency.

In addition to the existing Semitrans modules with IGBT chips from Infineon, Semitrans modules are also available with V-IGBTs from Fuji, offering a blocking voltage of 1.200V.

The V-IGBT-based modules are available in three different sizes, eight different power classes and three switching topologies, with rated currents of 150A to 600A.

Semitrans 3 and 4 modules feature low inductance, with a module inductance of 15nH.

The typical IGBT switching speed of 5000A/us results in a module overvoltage of 75V.

The modules come in single-switch, half-bridge or chopper topology for inverters in industrial drives or any other application area.

Standard Semitrans modules feature high insulation strength of 4,000V/min, which is 60 per cent higher than the global insulation strength norm of 2,500V/min.

In addition to the 1200V modules featuring IGBT2, IGBT2 fast, IGBT3 or IGBT4 technology, the modules are also available with blocking voltages of 600V and 1,700V.

Three standard Semitrans case outlines are available: 34mm-wide Semitrans 2 and 62mm-wide Semitrans 3 and 4 modules.

Additional sizes are also offered for non-standard customer applications.

Examples include Semitrans 6 with six-pulse inverter bridge circuits, and Semitrans 5 with circuits for three-level inverters as well as for current monitoring, which is achieved by integrating shunts into the modules.

Semitrans 9 has been developed to provide insulation strength of 9kV for railway applications.

All Semitrans modules feature a copper baseplate.