Renesas introduces 10th-generation power Mosfets
Renesas Technology
10th-generation power Mosfets
Renesas Technology Europe has announced a line-up of 12 10th-generation power Mosfet products for isolated DC/DC converters for applications such as servers and communications/industrial equipment.
The new power Mosfets deliver a reduced switching loss for improved energy efficiency and cover a wide voltage tolerance range (40V, 60V, 80V and 100V).
According to the company, the 10th-generation fabrication process employed for the 12 new products has a proven track record in earlier power Mosfets (used mainly in non-isolated DC/DC converters) designed with a focus on on-resistance and it has been optimised to achieve a gate-drain charge (Qgd) that is up to 50 per cent lower than that of previous Renesas Technology products.
The Qgd is a key characteristic in achieving a low switching loss in a power Mosfet.
The high-performance package (package code LFPAK) lowers package resistance and improves heat dissipation characteristics, boosting product performance still further and contributing to isolated DC/DC converters with higher efficiency and reduced energy consumption.
To reduce the energy consumption of isolated DC/DC converters, there is demand for power Mosfets with a lower Qgd.
The 12 new power Mosfets are fabricated using Renesas Technology's 0.18um 10th-generation process, which has been optimised for this application.
For example, the RJK1056DPB with a 100V voltage tolerance has a Qgd of 7.5nC, which is approximately half the 14.5nC of the company's earlier HAT2173H.
The input and output voltages of an isolated DC/DC converter are determined by the voltage tolerance of the power Mosfets used.
In terms of the isolated components, an isolated DC/DC converter comprises a primary power supply as the input side and a secondary power supply as the output side.
The line-up of new power Mosfets includes products with a voltage tolerance of 80V and 100V, particularly in demand for the primary side, and products with a voltage tolerance of 40V and 60V, particularly in demand for the secondary side.
Customers can choose the products that best meet their requirements.
The new power Mosfets use Renesas Technology's LFPAK high-performance package.
It provides both low package resistance and excellent heat dispersion characteristics to prevent overheating of the element.
In comparison with a conventional SOP-8 or the like, the package itself contributes to the low-loss characteristics of the product.
Internal connections are made directly to a frame, reducing package inductance and ensuring suitability for high-frequency operation.
More stories
Dytran's new inline charge amplifier operates in high-humidity and dirty environments
Dytran Instruments has introduced a miniature inline charge amplifier designed for use with high-temperature charge-mode accelerometers.
Murata offers toroidal surface-mount power inductor for consumer electronics devices
Murata Power Solutions has introduced the 8300 series of toroidal surface-mount power inductors, whose miniature, low-profile design makes them suitable for use in handheld consumer electronics devices, where the available PCB footprint and height are restricted.
Rectifiers offer speed and weight improvements
Campbell Collins, a supplier of power supplies, capacitors and hi-rel power semiconductors, has introduced a new range of hyperfast, soft recovery, nanospeed and nanosize rectifiers from SSDI.
Power semiconductor comes in three-level topology
Semikron has launched its newest MINISKIIP IGBT power semiconductor module, which is now also available in three-level topology.
Dual-power Mosfets suitable for space applications
International Rectifier (IR) has introduced a range of radiation-hardened Mosfets for low-power lightweight space applications requiring a small footprint, such as satellite payload power systems.
