IR launches automotive DirectFET2 power Mosfets

The AUIRF7640S2, AUIRF7647S2 and AUIRF7675M2 devices expand IR's portfolio of automotive DirectFET2 power Mosfets for Class D audio systems and are optimised with low gate charge (Qg) to improve total harmonic distortion (THD) and efficiency, while low diode reverse recovery charge (Qrr) further improves THD and lowers EMI.

With a footprint smaller than an SO-8, the AUIRF7640S2 and AUIRF7647S2 small-can devices are capable of delivering 100W per channel into an 8ohm load with no heat sink to offer a compact Class D solution ideal for saving PCB space where multiple channels are required.

The AUIRF7675M2 medium-can device, which features a footprint 54 per cent smaller than a DPak, is capable of delivering 250W per channel into a 4ohm load with no heat sink, making it suitable for the sub-woofer output stage of Class D audio systems.

As with all DirectFET products, the new devices offer minimal thermal impedance and parasitic package resistance and inductance to deliver excellent power density and efficiency facilitated by dual-sided cooling.

The devices are qualified according to AEC-Q101 standards, feature an environmentally friendly, lead-free and RoHS-compliant bill of materials and are part of IR's automotive-quality initiative targeting zero defects.