Fairchild unveils small P-channel Microfet Mosfet
Fairchild Semiconductor
Microfet Mosfet
Fairchild Semiconductor has introduced a 20V 2mm x 2mm x 0.55mm thin Microfet Mosfet, which provides low RDS(ON), for designers of portable applications.
The FDMA6023PZT - a dual P-channel Mosfet in a compact, low-profile package - has been developed in response to the portable design challenge requirements for thinner and smaller applications that are equipped with technology that conserves battery life.
The company claims that the device is packaged in an ultra-thin, lead-frame exposed Microfet package with thermal resistance, delivering power dissipation and reducing conduction losses compared to conventional Mosfets.
It is designed with Fairchild's advanced-performance Powertrench Mosfet process technology.
This technology yields low values for RDS(ON), total gate charge (QG) and Miller charge (QGD) - enhancements that result in a good conduction and switching performance.
The FDMA6023PZT is part of a portfolio of Microfet Mosfets, which, according to the company, are pivotal in addressing the power design challenges in today's feature-rich portable applications.
This portfolio includes the FDMA1027PT, a 20V P-channel Powertrench Mosfet, and the FDFMA2P853T, a 20V P-channel Powertrench Mosfet with a Schottky diode.
These products are 55 per cent smaller and 50 per cent lower in height than the 3mm x 3mm x 1.1mm Mosfets typically used in low-voltage designs.
Price start at USD0.48 (GBP0.33) each in 1,000-piece quantities and samples are available now.
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