Diodes offers DFN-format dual-device combinations
Diodes Incorporated
DFN-format dual-device combinations
Diodes Incorporated has introduced dual-device combinations in thermally efficient ultra-small DFN packaging for charging and switching applications in portable devices.
The DMS2220LFDB and DMS2120LFWB co-package a 20V P-channel enhancement-mode Mosfet with a companion diode in a choice of 2mm x 2mm DFN2020 and 3mm x 2mm DFN3020 packages.
The DMP2160UFDB co-packages two of the same Mosfets in the DFN2020 format.
Compared to larger 3mm x 3mm footprint packages traditionally used in portable application designs, the DFN2020 takes 55 per cent less PCB space and, with an off-board height of just 0.5mm, the package is also 50 per cent thinner, suiting next-generation product design.
The Mosfets used in these packages feature low gate charge and a typical RDS(on) of 86mohm at VGS of 1.8V, ensuring that switching and on-state losses are minimised.
To further help improve efficiency, the type of diode employed in these packages is Diodes's own high-performance super barrier rectifier (SBR).
With a typical low forward voltage of just 0.42V, the SBR offers a reduction in power dissipation compared to conventional Schottky diodes, according to Diodes.
In 10,000-piece quantities, the dual-Mosfet DMP2160UFDB is priced at USD0.08 (GBP0.05) and the Mosfet-SBR-combination DMS2220LFDB and DMS2120LFWB at USD0.075 and USD0.070 respectively.
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