RF transistors for wireless communications devices

The low-noise bipolar transistors are offered in the same packages as previous-generation devices to ensure an easy upgrade path, and in a slim package variant to reduce board space.

When used as the low noise amplifier (LNA) stage of the RF signal chain, the transistors reduce the risk of electrostatic discharge that can lead to failure or damage to the wireless system.

The energy efficient and cost-effective RF transistors from Infineon are said to be ideal for various wireless communication applications such as Wimax and GPS modules, active antenna or Wi-Fi data cards.

The devices feature a high maximum RF input power with a low noise figure (NF), high gain and high inter-modulation robustness that allow system sensitivity to be increased.

The transistors provide effective ESD protection of up to 2kV HBM (human body model).

The maximum input power was increased from 10dBm to 20dBm while the NFmin is specified at 0.6dB at 2.4GHz.